R5F61663RN50FPV Renesas Electronics America, R5F61663RN50FPV Datasheet - Page 1447

• Manufacturer Part Number: R5F61663RN50FPV
• Description: MCU FLASH 384K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61663RN50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

30.5
Table 30.11 USB Characteristics when On-Chip USB Transceiver is Used
Conditions: V
Note:
Input
Output
*
USB Characteristics
Input high voltage
Input low voltage
Differential input
sensitivity
Differential common
mode range
Output high voltage
Output low voltage
Crossover voltage
Rising time
Falling time
Ratio of rising time to
falling time
Output resistance
V
CC
(USD+, USD− pin characteristics)
CKU = 48 MHz, T
T
Item
a
= PLLV
CC
= –40°C to +85°C (wide-range specifications)
= PLLV
CC
= DrV
CC
= DrV
CC
a
= 2.95 V to 3.60 V in the H8SX/1668M Group.
= –20°C to +75°C (regular specifications),
V
t
Symbol Min.
V
V
V
V
V
V
t
t
Z
CC
R
F
RFM
DRV
IH
IL
DI
CM
OH
OL
CRS
= 3.0 V to 3.6 V*, V
2.0

0.2
0.8
2.8

1.3
4
4
90
28
Max.

0.8

2.5

0.3
2.0
20
20
111.11
44
SS
Rev. 2.00 Sep. 24, 2008 Page 1413 of 1468
= PLLV
Unit
V
V
V
V
V
V
V
ns
ns
%
Ω
Section 30 Electrical Characteristics
SS
Test Conditions
(D+) − (D−)
I
I
(T
Including
R
OH
OL
= DrV
S
R
= 2 mA
= −200 µA
/T
= 22Ω
F
)
SS
= AV
REJ09B0412-0200
SS
Figure 30.57
Figure 30.58
= 0 V,