DS72011RB120FPV Renesas Electronics America, DS72011RB120FPV Datasheet - Page 282

IC SH7201 MPU ROMLESS 176LQFP

DS72011RB120FPV

Manufacturer Part Number
DS72011RB120FPV
Description
IC SH7201 MPU ROMLESS 176LQFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7200r
Datasheet

Specifications of DS72011RB120FPV

Core Size
32-Bit
Core Processor
SH-2A
Speed
120MHz
Connectivity
CAN, EBI/EMI, FIFO, I²C, SCI, Serial Sound
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
104
Program Memory Type
ROMless
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 70°C
Package / Case
176-LQFP
No. Of I/o's
109
Ram Memory Size
32KB
Cpu Speed
120MHz
Digital Ic Case Style
LQFP
Supply Voltage Range
3V To 3.6V
Operating Temperature Range
-20°C To +70°C
Embedded Interface Type
I2C, SSI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
R0K572011S000BE - KIT STARTER FOR SH7201HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
Eeprom Size
-
Program Memory Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DS72011RB120FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 9 Bus State Controller (BSC)
(9)
The following two types of read/write access are supported.
• Multiple read/multiple write
• Single read/single write
Multiple read/multiple write occurs in the following cases.
1. CPU burst access (cache replace)
2. Access with longword (32-bit) to the SDRAM data bus having 8-bit or 16-bit width
3. Access with word (16-bit) to the SDRAM data bus having 8-bit width
4. Multiple data transfer in DMA pipeline transfer
The access timing can be set independently for each channel using the SDRAMI timing register
(SDITR). Access timing examples are described below.
(a)
Figure 9.14 shows a timing example for multiple read of 4 units of data, and figure 9.15 for
multiple write of 4 units of data.
The number of DMA transfers performed will vary depending on factors such as the number of
transfers and the transfer data size per operand and the SDRAM bus width. Read commands or
write commands may or may not be issued consecutively in response to an access request from the
bus master. When read commands or write commands are not issued consecutively, a deselect
command is issued between them.
Furthermore, deactivation and activation are performed automatically when the SDRAM row
address changes during a DMA transfer operation.
Figure 9.16 shows a timing example for multiple read of 4 units of data, and figure 9.17 for
multiple write of 4 units of data, when read/write commands are not issued consecutively. Figure
9.18 shows a timing example for multiple write with a row address change.
The access timing is modified by means of settings in the SDRAMm timing register (SDmTR).
Page 254 of 1190
Read/Write Access
Multiple Read/Multiple Write Access
R01UH0026EJ0300 Rev. 3.00
SH7201 Group
Sep 24, 2010

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