CY8C20X34 CYPRESS [Cypress Semiconductor], CY8C20X34 Datasheet - Page 43
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CY8C20X34
Manufacturer Part Number
CY8C20X34
Description
Technical Reference Manual (TRM)
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
1.CY8C20X34.pdf
(218 pages)
- Current page: 43 of 218
- Download datasheet (3Mb)
4.1.2.7
The TableRead function gives the user access to part-spe-
cific data stored in the Flash during manufacturing. The
Flash for these tables is separate from the program Flash
and is not directly accessible. It also returns a revision ID
for the die (do not confuse this with the silicon ID stored in
the Table 0 row in
One of the uses of the TableRead function is to retrieve the
values needed to optimize Flash programming for tempera-
ture. More information about how to use these values is in
the section titled
Table 4-11. Flash Tables with Assigned Values in Flash Bank 0
4.1.2.9
The Checksum function calculates a 16-bit checksum over a
user specifiable number of blocks, within a single Flash
bank starting at block zero. The BLOCKID parameter is
used to pass in the number of blocks to checksum. A
BLOCKID value of ‘1’ calculates the checksum of only block
0, while a BLOCKID value of ‘0’ calculates the checksum of
the entire Flash bank.
The 16-bit checksum is returned in KEY1 and KEY2. The
parameter KEY1 holds the lower 8 bits of the checksum and
the parameter KEY2 holds the upper 8 bits of the checksum.
Table 4-12. Checksum Parameters (07h)
PSoC CY8C20x34 TRM, Version 1.0
Table 0
Table 1
Table 2
Table 3
KEY1
KEY2
BLOCKID
Name
Address
0,F8h
0,F9h
0,FAh
Silicon ID
Voltage
Reference Trim
for 3.3V
reg[1,EA]
Voltage
Reference Trim
for 2.7V
reg[1,EA]
TableRead Function
Checksum Function
M (cold)
“Clocking Strategy” on page
F8h
Table
Type
RAM
RAM
RAM
4-11).
IMO Trim
for 3.3V
reg[1,E8]
IMO Slow Trim
12 MHz
Vdd = 2.7V
Number of Flash blocks to calculate
3Ah
Stack Pointer value+3, when SSC is
executed.
checksum on.
B (cold)
F9h
Description
Room
Temperature
Calibration
for 3.3V
Room
Temperature
Calibration
for 2.7V
Mult (cold)
45.
FAh
Hot
Temperature
Calibration
for 3.3V
Hot
Temperature
Calibration
for 2.7V
M (hot)
FBh
4.1.2.8
The EraseAll function performs a series of steps that
destroys the user data in the Flash banks and resets the
protection block in each Flash bank to all zeros (the unpro-
tected state). This function is only executed by an external
programmer. If EraseAll is executed from code, the M8C will
HALT without touching the Flash or protections. See
Table
4.1.2.10
The Calibrate0 function transfers the calibration values
stored in a special area of the Flash to their appropriate reg-
isters. This function may be executed at any time to set all
calibration values back to their 5V values. However, it is
unnecessary to call this function. This function is simply doc-
umented for completeness. 3.3V calibration values are
accessed by way of the TableRead function, which is
described in the section titled
page
Table 4-13. Calibrate0 Parameters (08h)
KEY1
KEY2
Name
Voltage
Reference Trim
for 5V
reg[1,EA]
IMO Slow Trim
6 MHz
Vdd = 3.3V
43.
4-11.
B (hot)
FCh
Address
0,F8h
0,F9h
EraseAll Function
Calibrate0 Function
IMO Trim
for 5V
reg[1,E8]
IMO Slow Trim
6 MHz
Vdd = 2.7V
Mult (hot)
Type
RAM
RAM
FDh
3Ah
Stack Pointer value+3, when SSC is
executed.
Supervisory ROM (SROM)
Room
Temperature
Calibration
for 5V
IMO Slow Trim
6 MHz
Vdd = 5.0V
“TableRead Function” on
FEh
00h
Description
Hot
Temperature
Calibration
for 5V
FFh
01h
43
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