UPD70F3738GF-GAS-AX Renesas Electronics America, UPD70F3738GF-GAS-AX Datasheet - Page 903

• Manufacturer Part Number: UPD70F3738GF-GAS-AX
• Description: MCU 32BIT V850ES/JX3-L 100-LQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Jx3-Lr

Specifications of UPD70F3738GF-GAS-AX

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 20MHz
• Connectivity: CSI, EBI/EMI, I²C, UART/USART
• Peripherals: DMA, LVD, PWM, WDT
• Number Of I /o: 84
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 2.2 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

30.3
flash memory programmer, regardless of whether the V850ES/JG3-L has already been mounted on the target system
or not (off-board/on-board programming).
supported, so that the program cannot be changed by an unauthorized person.
the program will be changed after production/shipment of the target system. A boot swap function that rewrites the
entire flash memory area safely is also supported. In addition, interrupt servicing can be executed during self
programming, so that the flash memory can be rewritten under various conditions, such as while communicating with
an external device.
On-board programming
Off-board programming
Self programming
The internal flash memory of the V850ES/JG3-L can be rewritten by using the rewrite function of the dedicated
In addition, a security function that prohibits rewriting the user program written to the internal flash memory is also
The rewrite function using the user program (self programming) is ideal for an application where it is assumed that
Remark
Rewrite Method
Functional Outline
The FA series is a product of Naito Densei Machida Mfg. Co., Ltd.
Flash memory can be rewritten after the device is mounted on the
target system, by using a dedicated flash memory programmer.
Flash memory can be rewritten before the device is mounted on the
target system, by using a dedicated flash memory programmer and a
dedicated program adapter board (FA series).
Flash memory can be rewritten by executing a user program that has
been written to the flash memory in advance by means of off-board/on-
board programming. (During self-programming, instructions cannot be
fetched from or data access cannot be made to the internal flash
memory area. Therefore, the rewrite program must be transferred to
the internal RAM or external memory in advance.)
CHAPTER 30 FLASH MEMORY
Table 30-1. Rewrite Method
User’s Manual U18953EJ5V0UD
Functional Outline
Flash memory
programming mode
Normal operation mode
Operation Mode
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