R5F213J6CNNP#U0 Renesas Electronics America, R5F213J6CNNP#U0 Datasheet - Page 688

• Manufacturer Part Number: R5F213J6CNNP#U0
• Description: MCU 1KB FLASH 32K ROM 36-QFN
• Manufacturer: Renesas Electronics America
• Series: R8C/3x/3JCr

Specifications of R5F213J6CNNP#U0

• Core Processor: R8C
• Core Size: 16/32-Bit
• Speed: 20MHz
• Connectivity: I²C, LIN, SIO, SSU, UART/USART
• Peripherals: POR, PWM, Voltage Detect, WDT
• Number Of I /o: 31
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 2.5K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 36-WQFN Exposed Pad, 36-HWQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R8C/3JC Group
REJ09B0602-0100 Rev.1.00
May 12, 2010
Table 33.6
Notes:
−
−
−
t
−
−
t
READY)
−
−
−
−
d(SR-SUS)
d(CMDRST-
Symbol
1. V
2. Definition of programming/erasure endurance
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 1,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
command at least three times until the erase error does not occur.
CC
= 2.7 to 5.5 V and T
Program/erase endurance
Byte program time
Block erase time
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Time from suspend until erase restart
Time from when command is forcibly
terminated until reading is enabled
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
Flash Memory (Program ROM) Electrical Characteristics
Parameter
(7)
opr
= 0 to 60 ° C, unless otherwise specified.
(2)
Ambient temperature = 55 ° C
Conditions
1,000
Min.
2.7
1.8
20
−
−
−
0
−
−
0
(3)
33. Electrical Characteristics
Standard
Typ.
0.3
80
−
−
−
−
−
−
−
−
−
30+CPU clock
30+CPU clock
5+CPU clock
× 3 cycles
× 1 cycle
× 1 cycle
Max.
500
5.5
5.5
Page 657 of 715
60
−
−
−
−
times
year
Unit
ms
µ s
µ s
µ s
µ s
° C
V
V
s