DF2148BTE20 Renesas Electronics America, DF2148BTE20 Datasheet - Page 20

IC H8S MCU FLASH 128K 100-QFP

DF2148BTE20

Manufacturer Part Number
DF2148BTE20
Description
IC H8S MCU FLASH 128K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2148BTE20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, IrDA, SCI, X-Bus
Peripherals
PWM, WDT
Number Of I /o
74
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2148BTE20
HD64F2148BTE20

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2148BTE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Rev. 3.00 Mar 21, 2006 page xviii of liv
Item
27.1.6 Flash Memory
Characteristics
Table 27.15 Flash
Memory
Characteristics
27.2.2 DC
Characteristics
Table 27.17 DC
Characteristics (5)
27.2.3 AC
Characteristics
Table 27.23 Timing of
On-Chip Peripheral
Modules (1)
27.2.7 Usage Notes
Figure 27.5
Connection of VCL
Capacitor
Page
722
723
736
752
761
Revision (See Manual for Details)
Table 28.15 amended
Notes 8 to 10 added
Notes: 8. Minimum number of times for which all characteristics
are guaranteed after rewriting (Guarantee range is 1 to
minimum value).
9. Reference value for 25 C (as a guideline, rewriting should
normally function up to this value).
10. Data retention characteristic when rewriting is performed
within the specification range, including the minimum value.
Table 27.17 (5) amended
Table 27.23 (1) amended
(Before) t
Figure 27.5 amended
< Product with internal step-down function >
HD64F2145B
HD64F2148B
Item
Programming time *
Erase time *
Reprogramming count
Data retention time *
Schmitt
trigger input
voltage
1
*
3
*
P67 to P60 (KWUL
= 00) *
KIN15 to KIN8 *
IRQ2 to IRQ0 *
IRQ5 to IRQ3
6
cscyc
Item
1
10
*
2
*
2
4
*
6
,
(After) t
3
,
7
*
8
,
(1) V
Symbol Min
V
V
Scyc
T
T
T
+
+
– V
T
Symbol Min
t
t
N
t
P
E
DRP
WEC
V
V
V
V
CC
CC
CC
CC
B
B
0.2
0.05
0.2
0.05
100 *
10
8
Typ Max
Typ
10
100
10,000 *
V
V
CC
CC
9
B
Max
200
1200 ms/block
0.7
0.7
Unit
ms/
128 bytes
times
Years
V
Unit
Test
Condition
Test
Conditions

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