DF2148BTE20 Renesas Electronics America, DF2148BTE20 Datasheet - Page 778

• Manufacturer Part Number: DF2148BTE20
• Description: IC H8S MCU FLASH 128K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2148BTE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, IrDA, SCI, X-Bus
• Peripherals: PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2148BTE20; HD64F2148BTE20

Section 27 Electrical Characteristics
27.1.6
Table 27.15 shows the flash memory characteristics.
Table 27.15 Flash Memory Characteristics
Conditions: V
Item
Programming time *
Erase time *
Reprogramming count
Data retention time *
Programming
Erase
Rev. 3.00 Mar 21, 2006 page 722 of 788
REJ09B0300-0300
Flash Memory Characteristics
1
*
3
*
6
Wait time after SWE-bit setting *
Wait time after PSU-bit setting *
Wait time after P-bit setting *
Wait time after P-bit clear *
Wait time after PSU-bit clear *
Wait time after PV-bit setting *
Wait time after dummy write *
Wait time after PV-bit clear *
Wait time after SWE-bit clear *
Maximum programming
count *
Wait time after SWE-bit setting *
Wait time after ESU-bit setting *
Wait time after E-bit setting *
Wait time after E-bit clear *
Wait time after ESU-bit clear *
Wait time after EV-bit setting *
Wait time after dummy write *
Wait time after EV-bit clear *
Wait time after SWE-bit clear *
Maximum erase count *
CC
1
= 3.0 V to 3.6 V, V
10
*
2
*
1
4
*
4
*
5
1
*
SS
6
*
1
1
7
= 0 V, T
1
1
1
1
1
1
*
*
1
1
1
1
1
1
4
6
1
1
1
1
Symbol Min
t
t
N
t
x
y
z1
z2
z3
N
x
y
z
N
P
E
DRP
a
WEC
= –20 to +75°C
—
—
100 *
10
1
50
28
198
8
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
—
8
Typ
10
100
10,000 *
—
—
—
30
200
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
9
Max
200
1200 ms/block
—
—
—
—
32
202
12
—
—
—
—
—
—
1000 times
—
—
100
—
—
—
—
—
—
120
Unit
ms/
128 bytes
times
Years
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
ms
µs
µs
µs
µs
µs
µs
times
Test
Condition
1
7
Additional
write
n
n
6
1000