DF2148BTE20 Renesas Electronics America, DF2148BTE20 Datasheet - Page 687

• Manufacturer Part Number: DF2148BTE20
• Description: IC H8S MCU FLASH 128K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2148BTE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, IrDA, SCI, X-Bus
• Peripherals: PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2148BTE20; HD64F2148BTE20

23.12
The following lists notes on the use of on-board programming modes and programmer mode.
1. Perform programming/erasing with the specified voltage and timing.
2. Notes on power on/off
3. Perform flash memory programming/erasing in accordance with the recommended algorithm
4. Do not set/clear the SWE bit during program execution in the flash memory.
5. Do not use interrupts during flash memory programming/erasing
6. Do not perform additional programming. Programming must be performed in the erased state.
7. Ensure that the PROM programmer is correctly attached before programming.
8. Do not touch the socket adapter or LSI while programming.
If a voltage higher than the rated voltage is applied, the product may be fatally damaged. For
3-V and 5-V version products, use a PROM programmer that supports the Renesas
64/128/256-kbyte flash memory on-chip MCU device at 3.3 V. Do not set the programmer to
HN28F101 or the programming voltage to 5.0 V.
At powering on or off the Vcc power supply, fix the RES pin to low and set the flash memory
to hardware protection state. This power on/off timing must also be satisfied at a power-off and
power-on caused by a power failure and other factors.
In the recommended algorithm, flash memory programming/erasing can be performed without
subjecting this LSI to voltage stress or sacrificing program data reliability. When setting the P
or E bit in FLMCR1 to 1, set the watchdog timer against program runaway.
Do not set/clear the SWE bit during program execution in the flash memory. An interval of at
least 100 s is necessary between program execution or data reading in flash memory and
SWE bit clearing. When the SWE bit is set to 1, flash memory data can be modified, however,
flash memory data can be read only in program-verify or erase-verify mode. Do not access the
flash memory for a purpose other than verification during programming/erasing. Do not clear
the SWE bit during programming, erasing, or verifying.
In order to give the highest priority to programming/erasing operation, disable all interrupts
including NMI input when the flash memory is programmed or erased.
Program the area with 128-byte programming-unit blocks in on-board programming or
programmer mode only once. Perform programming in the state where the programming-unit
block is fully erased.
If the socket, socket adapter, or product index does not match the specifications, too much
current flows and the product may be damaged.
Touching either of these can cause contact faults and write errors.
Usage Notes
Rev. 3.00 Mar 21, 2006 page 631 of 788
REJ09B0300-0300
Section 23 ROM