UPD70F3771GF-GAT-AX Renesas Electronics America, UPD70F3771GF-GAT-AX Datasheet - Page 1377

• Manufacturer Part Number: UPD70F3771GF-GAT-AX
• Description: MCU 32BIT V850ES/JX3-H 128-LQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Jx3-Hr

Specifications of UPD70F3771GF-GAT-AX

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CAN, CSI, EBI/EMI, I²C, UART/USART, USB
• Peripherals: DMA, LVD, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 2.85 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

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V850ES/JG3-H, V850ES/JH3-H
31.4.5 Communication commands
The signals sent from the dedicated flash programmer to the V850ES/JG3-H and V850ES/JH3-H are called “commands”.
The response signals sent from the V850ES/JG3-H and V850ES/JH3-H to the dedicated flash programmer are called
“response commands”.
commands are issued from the dedicated flash programmer, and the V850ES/JG3-H and V850ES/JH3-H perform the
processing corresponding to the commands.
R01UH0042EJ0400 Rev.4.00
Sep 30, 2010
Blank check
Erase
Write
Verify
Read
System setting,
control
Classification
The V850ES/JG3-H and V850ES/JH3-H communicate with the dedicated flash programmer by means of commands.
The following shows the commands for flash memory control in the V850ES/JG3-H and V850ES/JH3-H. All of these
Block blank check
command
Chip erase command
Block erase command
Program command
Verify command
Checksum command
Read command
Silicon signature
command
Security setting
command
Command Name
Dedicated flash programmer
Table 31-8. Flash Memory Control Commands
Figure 31-10. Communication Commands
CSIF0,
CSIF3
√
√
√
√
√
√
√
√
√
CSIF0 + HS,
CSIF3 + HS
Support
Response command
√
√
√
√
√
√
√
√
√
Command
UARTC0
√
√
√
√
√
√
√
√
√
V850ES/JG3-H,
V850ES/JH3-H
Checks if the contents of the memory in the
specified block have been correctly erased.
Erases the contents of the entire memory.
Erases the contents of the memory of the
specified block.
Writes the specified address range, and
executes a contents verify check.
Compares the contents of memory in the
specified address range with data
transferred from the flash programmer.
Reads the checksum in the specified
address range.
Reads the data written to flash memory.
Reads silicon signature information.
Prohibits the chip erase command, block
erase command, program command, read
command, and boot area rewrite.
CHAPTER 31 FLASH MEMORY
Function
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