D6417729RHF200BV Renesas Electronics America, D6417729RHF200BV Datasheet - Page 371

• Manufacturer Part Number: D6417729RHF200BV
• Description: IC SUPER H MPU ROMLESS 208QFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7700r

Specifications of D6417729RHF200BV

• Core Processor: SH-3 DSP
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: EBI/EMI, FIFO, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, WDT
• Number Of I /o: 96
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.85 V ~ 2.15 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 208-QFP Exposed Pad, 208-eQFP, 208-HQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Address Multiplexing: Synchronous DRAM can be connected without external multiplexing
circuitry in accordance with the address multiplex specification bits AMX2-AMX0 in MCR. Table
11.13 shows the relationship between the address multiplex specification bits and the bits output at
the address pins.
A25–A16 and A0 are not multiplexed; the original values are always output at these pins.
When A0, the LSB of the synchronous DRAM address, is connected to the SH7729R, it performs
longword address specification. Connection should therefore be made in the following order: with
a 32-bit bus width, connect pin A0 of the synchronous DRAM to pin A2 of the SH7729R, then
connect pin A1 to pin A3; with a 16-bit bus width, connect pin A0 of the synchronous DRAM to
pin A1 of the SH7729R, then connect pin A1 to pin A2.
SH7729R
Figure 11.13 Example of 64-Mbit Synchronous DRAM (16-Bit Bus Width)
DQMLU
DQMLL
RD/WR
RAS3x
CASx
CKIO
CKE
CSn
D15
A14
A13
A12
D0
A1
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Rev. 5.0, 09/03, page 323 of 806
64M synchronous DRAM
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(1M × 16 bit × 4 bank)
A13
A12
A11
A0
CLK
CKE
CS
RAS
CAS
WE
DQ15
DQ0
DQMU
DQML
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