D6417729RHF200BV Renesas Electronics America, D6417729RHF200BV Datasheet - Page 393

IC SUPER H MPU ROMLESS 208QFP

D6417729RHF200BV

Manufacturer Part Number
D6417729RHF200BV
Description
IC SUPER H MPU ROMLESS 208QFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7700r
Datasheet

Specifications of D6417729RHF200BV

Core Processor
SH-3 DSP
Core Size
32-Bit
Speed
200MHz
Connectivity
EBI/EMI, FIFO, IrDA, SCI, SmartCard
Peripherals
DMA, POR, WDT
Number Of I /o
96
Program Memory Type
ROMless
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
1.85 V ~ 2.15 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
208-QFP Exposed Pad, 208-eQFP, 208-HQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D6417729RHF200BV
Manufacturer:
EVERLIGHT
Quantity:
1 000
Part Number:
D6417729RHF200BV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Power-On Sequence: In order to use synchronous DRAM, mode setting must first be performed
after powering on. To perform synchronous DRAM initialization correctly, the bus state controller
registers must first be set, followed by a write to the synchronous DRAM mode register. In
synchronous DRAM mode register setting, the address signal value at that time is latched by a
combination of the RAS, CAS, and RD/WR signals. If the value to be set is X, the bus state
controller provides for value X to be written to the synchronous DRAM mode register by
performing a write to address H'FFFFD000 + X for area 2 synchronous DRAM, and to address
H'FFFFE000 + X for area 3 synchronous DRAM. In this operation the data is ignored, but the
mode write is performed as a byte-size access. To set burst read/single write, CAS latency 1 to 3,
wrap type = sequential, and burst length 1 supported by the SH7729R, arbitrary data is written in a
byte-size access to the following addresses.
Mode register setting timing is shown in figure 11.28.
As a result of the write to address H'FFFFD000 + X or H'FFFFE000 + X, a precharge all banks
(PALL) command is first issued in the TRp1 cycle, then a mode register write command is issued
in the TMw1 cycle.
Address signals, when the mode-register write command is issued, are as follows:
With 32-bit bus width:
CAS latency 1
CAS latency 2
CAS latency 3
With 16-bit bus width:
CAS latency 1
CAS latency 2
CAS latency 3
32-bit bus width:
16-bit bus width:
A15–A9 = 0000100 (burst read and single write)
A8–A6 = CAS latency
A5 = 0 (burst type = sequential)
A4–A2 = 000 (burst length 1)
A14–A8 = 0000100 (burst read and single write)
A7–A5 = CAS latency
A4 = 0 (burst type = sequential)
A3–A1 = 000 (burst length 1)
Area 2
FFFFD840
FFFFD880
FFFFD8C0
Area 2
FFFFD420
FFFFD440
FFFFD460
Area 3
FFFFE840
FFFFE880
FFFFE8C0
Area 3
FFFFE420
FFFFE440
FFFFE460
Rev. 5.0, 09/03, page 345 of 806

Related parts for D6417729RHF200BV