D6417729RHF200BV Renesas Electronics America, D6417729RHF200BV Datasheet - Page 41
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D6417729RHF200BV
Manufacturer Part Number
D6417729RHF200BV
Description
IC SUPER H MPU ROMLESS 208QFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7700r
Datasheet
1.D6417729RF133BV.pdf
(857 pages)
Specifications of D6417729RHF200BV
Core Processor
SH-3 DSP
Core Size
32-Bit
Speed
200MHz
Connectivity
EBI/EMI, FIFO, IrDA, SCI, SmartCard
Peripherals
DMA, POR, WDT
Number Of I /o
96
Program Memory Type
ROMless
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
1.85 V ~ 2.15 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
208-QFP Exposed Pad, 208-eQFP, 208-HQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Available stocks
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Part Number:
D6417729RHF200BV
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Company:
Part Number:
D6417729RHF200BV
Manufacturer:
Renesas Electronics America
Quantity:
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Figure 24.4
Figure 24.5
Figure 24.6
Figure 24.7
Figure 24.8
Figure 24.9
Figure 24.10 PLL Synchronization Settling Time in Case of IRQ/IRL Interrupt ...................... 712
Figure 24.11 Reset Input Timing............................................................................................... 714
Figure 24.12 Interrupt Signal Input Timing............................................................................... 714
Figure 24.13 IRQOUT Timing .................................................................................................. 714
Figure 24.14 Bus Release Timing.............................................................................................. 715
Figure 24.15 Pin Drive Timing at Standby................................................................................ 715
Figure 24.16 Basic Bus Cycle (No Wait) .................................................................................. 718
Figure 24.17 Basic Bus Cycle (One Wait)................................................................................. 719
Figure 24.18 Basic Bus Cycle (External Wait, WAITSEL = 1) ................................................ 720
Figure 24.19 Burst ROM Bus Cycle (No Wait) ........................................................................ 721
Figure 24.20 Burst ROM Bus Cycle (Two Waits) .................................................................... 722
Figure 24.21 Burst ROM Bus Cycle (External Wait, WAITSEL = 1) ...................................... 723
Figure 24.22 Synchronous DRAM Read Bus Cycle (RCD
Figure 24.23 Synchronous DRAM Read Bus Cycle (RCD
Figure 24.24 Synchronous DRAM Read Bus Cycle (Burst Read (Single Read
Figure 24.25 Synchronous DRAM Read Bus Cycle (Burst Read (Single Read
Figure 24.26 Synchronous DRAM Write Bus Cycle (RCD
Figure 24.27 Synchronous DRAM Write Bus Cycle (RCD
Figure 24.28 Synchronous DRAM Write Bus Cycle (Burst Write (Single Write
Figure 24.29 Synchronous DRAM Write Bus Cycle (Burst Mode (Single Write
Figure 24.30 Synchronous DRAM Burst Read Bus Cycle (RAS Down, Same Row Address,
Figure 24.31 Synchronous DRAM Burst Read Bus Cycle (RAS Down, Same Row Address,
Figure 24.32 Synchronous DRAM Burst Read Bus Cycle (RAS Down, Different Row
Figure 24.33 Synchronous DRAM Burst Read Bus Cycle
Figure 24.34 Synchronous DRAM Burst Write Bus Cycle (RAS Down, Same Row Address) 736
Figure 24.35 Synchronous DRAM Burst Write Bus Cycle (RAS Down, Different Row
Power-on Oscillation Settling Time ..................................................................... 709
Oscillation Settling Time on Return from Standby (Return by Reset) ................. 709
Oscillation Settling Time on Return from Standby (Return by NMI) .................. 710
Oscillation Settling Time on Return from Standby (Return by IRQ4 to IRQ0,
PINT0/1 and IRL3 to IRL0)................................................................................. 710
PLL Synchronization Settling Time during Standby Recovery (Reset or NMI) .. 711
PLL Synchronization Settling Time during Standby Recovery (IRQ/IRL or
PINT0/PINT1 Interrupt)....................................................................................... 711
RCD
CAS Latency 3, TPC
RCD
RCD
CAS Latency = 1)................................................................................................. 732
CAS Latency = 2)................................................................................................. 733
Address, TPC = 0, RCD = 0, CAS Latency = 1) .................................................. 734
(RAS Down, Different Row Address, TPC = 1, RCD = 0, CAS Latency = 1) .... 735
Address, TPC = 0, RCD = 0) ............................................................................... 737
0, CAS Latency
0, TPC
1, TPC
1, TRWL = 0) ........................................................................... 730
0, TRWL = 0) ........................................................................... 731
0) ................................................................................. 727
1, TPC 1) ................................................................. 726
0, CAS Latency
2, CAS Latency
0, TPC
2, TPC
Rev. 5.0, 09/03, page xxxix of xlvi
0, TRWL = 0)............ 728
1, TRWL = 1)............ 729
1, TPC
2, TPC
4),
4), RCD 1,
4),
4),
0) .. 724
1) .. 725
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