UPD70F3786GJ-GAE-AX Renesas Electronics America, UPD70F3786GJ-GAE-AX Datasheet - Page 1682

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UPD70F3786GJ-GAE-AX

Manufacturer Part Number
UPD70F3786GJ-GAE-AX
Description
MCU 32BIT V850ES/JX3-E 144-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Jx3-Er
Datasheet

Specifications of UPD70F3786GJ-GAE-AX

Core Processor
RISC
Core Size
32-Bit
Speed
50MHz
Connectivity
CAN, CSI, EBI/EMI, Ethernet, I²C, UART/USART, USB
Peripherals
DMA, LVD, PWM, WDT
Number Of I /o
100
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
124K x 8
Voltage - Supply (vcc/vdd)
2.85 V ~ 3.6 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
UPD70F3786GJ-GAE-AX
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
UPD70F3786GJ-GAE-AX
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
33.5 Rewriting by Self Programming
33.5.1 Overview
internal flash memory by itself. By using this interface and a self programming library that is used to rewrite the flash
memory with a user application program, the flash memory can be rewritten by a user application transferred in
advance to the internal RAM or external memory. Consequently, the user program can be upgraded and constant
data
1680
The V850ES/JH3-E and V850ES/JJ3-E support a flash macro service that allows the user program to rewrite the
Note Be sure not to allocate the program code to the block where the constant data of rewriting target is allocated.
Note
can be rewritten in the field.
See 33.2 Memory Configuration for the block configuration.
Figure 33-16. Concept of Self Programming
Flash function execution Flash information
Self programming library
CHAPTER 33 FLASH MEMORY
User’s Manual U19601EJ2V0UD
Flash macro service
Flash memory
Application program
Erase, write

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