DF2437FV Renesas Electronics America, DF2437FV Datasheet - Page 674

• Manufacturer Part Number: DF2437FV
• Description: IC H8S/2437 MCU FLASH 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of DF2437FV

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 85
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

20.9
1. The initial state of the Renesas Technology product at its shipment is in the erased state. For
2. For the PROM programmer suitable for programmer mode in this LSI and its program version,
3. If the socket, socket adapter, or product index does not match the specifications, overcurrent
4. If a voltage higher than the rated voltage is applied, the product may be fatally damaged. Use a
5. Do not remove the chip from the PROM programmer nor input a reset signal during
6. The flash memory is not accessible until FKEY is cleared after programming/erasing
7. At powering on or off the Vcc power supply, fix the RES pin to low and set the flash memory
8. Program the area with 128-byte programming-unit blocks in on-board programming or
9. When the chip is to be reprogrammed with the programmer after execution of programming or
10. To program data to the flash memory, data or programs must be allocated to addresses higher
11. If data other than H'FF (four bytes) is written to the key code area (H'00003C to H'00003F) of
Rev.2.00 May. 28, 2009 Page 634 of 732
REJ09B0059-0200
the product whose revision of erasing is undefined, we recommend to execute automatic
erasure for checking the initial state (erased state) and compensating.
refer to the instruction manual of the socket adapter.
flows and the product may be damaged.
PROM programmer that supports the Renesas Technology MCU device with 256-kbyte flash
memory at 3.3 V. Do not set the programmer to HN28F101 or the programming voltage to 5.0
V. Use only the specified socket adapter. If other adapters are used, the product may be
damaged.
programming/erasing. As a high voltage is applied to the flash memory during
programming/erasing, doing so may damage or destroy flash memory permanently. If reset is
executed accidentally, reset must be released after the reset input period of 100 μs which is
longer than normal.
completes. If this LSI is restarted by a reset immediately after programming/erasing has
finished, secure the reset period (period of RES = 0) of more than 100 μs. Though a transition
to the reset state or hardware standby state during programming/erasing is prohibited, if reset is
executed accidentally, reset must be released after the reset input period of 100 μs which is
longer than normal.
to the hardware protection state. This power on/off timing must also be satisfied at a power-off
and power-on caused by a power failure and other factors.
programmer mode only once. Perform programming in the state where the programming-unit
block is all erased.
erasure in on-board programming mode, it is recommended that automatic programming be
performed after execution of automatic erasure.
than that of the external interrupt vector table (H'000040) and H'FF must be written to the
areas that are reserved for the system in the exception handling vector table.
flash memory, reading cannot be performed in programmer mode. (In this case, data is read as
Usage Notes