MPC8313ECZQADDC Freescale Semiconductor, MPC8313ECZQADDC Datasheet - Page 438
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MPC8313ECZQADDC
Manufacturer Part Number
MPC8313ECZQADDC
Description
Microprocessors - MPU 8313 REV2.2 PB ENC EXT
Manufacturer
Freescale Semiconductor
Datasheet
1.MPC8313CZQADDC.pdf
(1214 pages)
Specifications of MPC8313ECZQADDC
Processor Series
MPC8313E
Core
e300
Data Bus Width
16 bit
Maximum Clock Frequency
133 MHz
Program Memory Size
16 KB
Data Ram Size
16 KB
Interface Type
I2C
Mounting Style
SMD/SMT
Package / Case
PBGA
Number Of Programmable I/os
32
Number Of Timers
4
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DDR Memory Controller
Figure 9-29
9.5.8
The DDR memory controller supports auto-refresh and self-refresh. Auto refresh is used during normal
operation and is controlled by the DDR_SDRAM_INTERVAL[REFINT] value; self-refresh is used only
when the DDR memory controller is set to enter a sleep power management state. The REFINT value,
which represents the number of memory bus clock cycles between refresh cycles, must allow for possible
outstanding transactions to complete before a refresh request is sent to the memory after the REFINT value
is reached. If a memory transaction is in progress when the refresh interval is reached, the refresh cycle
waits for the transaction to complete. In the worst case, the refresh cycle must wait the number of bus clock
cycles required by the longest programmed access. To ensure that the latency caused by a memory
transaction does not violate the device refresh period, it is recommended that the programmed value of
REFINT be less than that required by the SDRAM.
When a refresh cycle is required, the DDR memory controller does the following:
9-44
1. Completes all current memory requests.
2. Closes all open pages with a PRECHARGE-ALL command to each DDR SDRAM bank with an
3. Issues one or more auto-refresh commands to each DDR SDRAM bank (as identified by its chip
open page (as indicated by the row open table).
select) to refresh one row in each logical bank of the selected physical bank.
SDRAM Clock
DDR SDRAM Refresh
shows the use of the WR_DATA_DELAY parameter.
MDM n
MPC8313E PowerQUICC™ II Pro Integrated Processor Family Reference Manual, Rev. 2
MDQS
MDM n
MDQS
MRAS
MCAS
MDQ n
MDQ n
MWE
MCS
MA n
Figure 9-29. Write Timing Adjustments Example for Write Latency = 1
ROW
0
1
ACTTORW
2
3
COL
4
D0
D0
5
D1 D2 D3
D1 D2 D3
COL
6
00
00
D0
D0
7
D1 D2
D1 D2
8
D3
D3
9
10
11
Freescale Semiconductor
12
1/4 Delay
1/2 Delay
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