HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 154

MCU 5V 512K,PB-FREE 100-TQFP

HD64F3029XBL25V

Manufacturer Part Number
HD64F3029XBL25V
Description
MCU 5V 512K,PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet

Specifications of HD64F3029XBL25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Bit 7—Idle Cycle Insertion 1 (ICIS1): Selects whether one idle cycle state is to be inserted
between bus cycles in case of consecutive external read cycles for different areas.
Bit 7
ICIS1
0
1
Bit 6—Idle Cycle Insertion 0 (ICIS0): Selects whether one idle cycle state is to be inserted
between bus cycles in case of consecutive external read and write cycles.
Bit 6
ICIS0
0
1
Bit 5—Burst ROM Enable (BROME): Selects whether area 0 is a burst ROM interface area.
Bit 5
BROME
0
1
Bit 4—Burst Cycle Select 1 (BRSTS1): Selects the number of burst cycle states for the burst
ROM interface.
Bit 4
BRSTS1
0
1
Description
No idle cycle inserted in case of consecutive external read cycles for different
areas
Idle cycle inserted in case of consecutive external read cycles for different
areas
Description
No idle cycle inserted in case of consecutive external read and write cycles
Idle cycle inserted in case of consecutive external read and write cycles
Description
Area 0 is a basic bus interface area
Area 0 is a burst ROM interface area
Description
Burst access cycle comprises 2 states
Burst access cycle comprises 3 states
Rev. 2.0, 06/04, page 125 of 980
(Initial value)
(Initial value)
(Initial value)
(Initial value)

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