HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 612

• Manufacturer Part Number: HD64F3029XBL25V
• Description: MCU 5V 512K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3029XBL25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

18.2.4
This LSI’s flash memory is configured by the 512-kbyte user MAT and 10-kbyte user boot MAT.
The start address is allocated to the same address in the user MAT and user boot MAT. Therefore,
when the program execution or data access is performed between two MATs, the MAT must be
switched by using FMATS.
The user MAT or user boot MAT can be read in all modes if it is in ROM valid mode. However,
the user boot MAT can be programmed only in boot mode and PROM mode.
The user MAT and user boot MAT have different memory sizes. Do not access a user boot MAT
that is 10 kbytes or more. When a user boot MAT exceeding 10 kbytes is read from, an undefined
value is read.
18.2.5
The user MAT is divided into 64 kbytes (seven blocks), 32 kbytes (one block), and 4 kbytes (eight
blocks) as shown in figure 18.4. The user MAT can be erased in this divided-block units and the
erase-block number of EB0 to EB15 is specified when erasing.
The RAM emulation can be performed in the eight blocks of 4 kbytes.
Address H'000000
Address H'07FFFF
Flash MAT Configuration
Block Division
<User MAT>
Figure 18.3 Flash Memory Configuration
512 kbytes
Address H'0027FF
Address H'000000
<User Boot MAT>
Rev. 2.0, 06/04, page 583 of 980
10 kbytes