HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 875

MCU 5V 512K,PB-FREE 100-TQFP

HD64F3029XBL25V

Manufacturer Part Number
HD64F3029XBL25V
Description
MCU 5V 512K,PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet

Specifications of HD64F3029XBL25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
DRCRA—DRAM Control Register A
Rev. 2.0, 06/04, page 846 of 980
Initial value
Read/Write
Bit
Note: *A single
DRAM area select
DRAS2 DRAS1 DRAS0
DRAS2
R/W
0
1
areas. Unused
7
0
Burst access enable
DRAS1
0
1
R/W
6
0
RAS down mode
0
1
0
1
0
1
Burst disabled (always full access)
DRAM space access performed in fast page mode
pin serves as a common
DRAS0
DRAM interface: RAS up mode selected
DRAM interface: RAS down mode selected
Self-refresh mode
R/W
0
1
5
0
0
1
0
1
0
1
0
1
Refresh pin enable
0
1
DRAM self-refreshing is disabled in
software standby mode
DRAM self-refreshing is enabled
in software standby mode
pins can be used as input/output ports.
DRAM space
4
1
Normal
Normal
Normal
Normal
Normal
Area 5
(
DRAM space(
pin refresh signal output is disabled
pin refresh signal output is enabled
5
)
R/W
BE
3
0
DRAM space
DRAM space
Normal
Normal
Normal
Normal
Area 4
(
(
DRAM space(
RDM
R/W
H'EE026
2
0
4
4
output pin for a number of
4
)
)*
)
SRFMD
DRAM space
DRAM space
DRAM space
R/W
1
0
Normal
Normal
Area 3
(
(
(
DRAM space(
DRAM space(
2
3
3
3)
)*
RFSHE
)
)
R/W
0
0
DRAM space
DRAM space
DRAM space
DRAM space
DRAM interface
Normal
Area 2
(
(
(
(
2
2
2
2
)*
2
2
)*
)
)
)
)

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