HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 224

• Manufacturer Part Number: HD64F3029XBL25V
• Description: MCU 5V 512K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3029XBL25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

6.11
6.11.1
ABWCR, ASTCR, WCRH, and WCRL Write Timing: Data written to ABWCR, ASTCR,
WCRH, and WCRL takes effect starting from the next bus cycle. Figure 6.49 shows the timing
when an instruction fetched from area 0 changes area 0 from three-state access to two-state access.
DDR and CSCR Write Timing: Data written to DDR or CSCR for the port corresponding to the
CSn pin to switch between CSn output and generic input takes effect starting from the T
the DDR write cycle. Figure 6.50 shows the timing when the CS
input to CS
Address bus
Register and Pin Input Timing
Register Write Timing
1
output.
Address bus
+5
1
3-state access to area 0
T
1
Figure 6.49 ASTCR Write Timing
Figure 6.50 DDR Write Timing
T
2
High-impedance
T
3
T
1
P8DDR address
T
1
ASTCR address
T
T
2
2
T
3
2-state access to area 0
1
Rev. 2.0, 06/04, page 195 of 980
pin is changed from generic
T
3
T
1
T
2
3
state of