HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 995

• Manufacturer Part Number: HD64F3029XBL25V
• Description: MCU 5V 512K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3029XBL25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Modes 3 and 4: Figure D.2 is a timing diagram for the case in which RES goes low during an
external memory access in mode 3 or 4. As soon as RES goes low, all ports are initialized to the
input state. AS, RD, HWR, LWR, and CS
The address bus is initialized to the low output level 2.5 clock cycles after the low level of RES
is sampled. However, when PA
PB
low. Clock pin P6
Mode 5: Figure D.3 is a timing diagram for the case in which RES goes low during an external
memory access in mode 5. As soon as RES goes low, all ports are initialized to the input state. AS,
RD, HWR, and LWR go high, and the address bus and D
Clock pin P6
Rev. 2.0, 06/04, page 966 of 980
3
are used as CS output pins, they go to the high-impedance state at the same time as RES goes
P6
Internal reset
signal
A
(read)
(write)
D
(write)
I/O port,
PA
20
15
7
,
4
0
7
/
/A
to A
to D
to
,
23
7
0
/ goes to the output state at the next rise of after RES goes low.
0
to PA
1
7
Figure D.2 Reset during Memory Access (Modes 3 and 4)
/ goes to the output state at the next rise of after RES goes low.
6
/A
21
,
4
to PA
Access to external
T1
6
are used as address bus pins, or when P8
0
memory
go high, and D
T2
T3
15
15
to D
to D
0
0
go to the high-impedance state.
go to the high-impedance state.
High impedance
High impedance
H'000000
3
to P8
1
and PB
0
to