HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 786

• Manufacturer Part Number: HD64F3029XBL25V
• Description: MCU 5V 512K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3029XBL25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

21.3.6
Table 21.30 lists the flash memory characteristics.
Table 21.30 Flash Memory Characteristics
Conditions: V
Item
Programming time*
Erase time*
Programming time (total)*
Erase time (total)*
Programming and erase time
(total)*
Reprogramming count
Data retention time*
Notes: *1 Programming and erase time depend on the data size.
1,
*
*2 Programming and erase time and excluded the data transfer time.
*3 It is the number of times of min. which guarantees all the characteristics after
*4 It is the characteristic when reprogramming is performed by specification within the
2,
*
Flash Memory Characteristics
4
1,
reprogramming. (A guarantee is the range of a 1-min. value.)
limits including a min. value.
*
2,
(operating temperature range for programming/erasing: Standard characteristics
specifications)
*
4
CC
1,
1,
*
= 3.0 V to 3.6 V, AV
4
2,
*
2,
*
4
*
4
1,
*
2,
*
4
Symbol
t
t
N
t
P
E
DRP
t
t
t
WEC
P
E
PE
CC
= 3.0 V to 3.6 V, V
Min
—
—
—
—
—
—
—
100*
10
3
Typ
3
80
500
1000
10
10
20
—
—
SS
Max
30
800
5000
10000
30
30
60
—
—
= AV
Rev. 2.0, 06/04, page 757 of 980
SS
Unit
ms/128 bytes
ms/4-kbyte
block
ms/32-kbyte
block
ms/64-kbyte
block
s/512
kbytes
s/512
kbytes
s/512
kbytes
Times
Year
= 0 V, T
a
= 0°C to +75°C
Test Conditions
T
all "0"
T
T
a
a
a
= 25°C,
= 25°C
= 25°C