HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 212

MCU 5V 512K,PB-FREE 100-TQFP

HD64F3029XBL25V

Manufacturer Part Number
HD64F3029XBL25V
Description
MCU 5V 512K,PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet

Specifications of HD64F3029XBL25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Contention between RTCOR Write and Compare Match: If a compare match occurs in the T
state of an RTCOR write cycle, writing takes priority and the compare match signal is inhibited.
See figure 6.41.
RTCNT Operation at Internal Clock Source Switchover: Switching internal clock sources may
cause RTCNT to increment, depending on the switchover timing. Table 6.10 shows the relation
between the time of the switchover (by writing to bits CKS2 to CKS0) and the operation of
RTCNT.
The RTCNT input clock is generated from the internal clock source by detecting the falling edge
of the internal clock. If a switchover is made from a high clock source to a low clock source, as in
case No. 3 in table 6.10, the switchover will be regarded as a falling edge, an RTCNT clock pulse
will be generated, and RTCNT will be incremented.
Figure 6.41 Contention between RTCOR Write and Compare Match
Compare match signal
Internal write signal
Address bus
RTCOR
RTCNT
T
1
N
N
RTCOR address
T
2
RTCOR write data
T
3
Rev. 2.0, 06/04, page 183 of 980
N+1
M
Inhibited
3

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