HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 660

• Manufacturer Part Number: HD64F3029XBL25V
• Description: MCU 5V 512K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3029XBL25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Table 18.9 Hardware Protection
Item
FWE-pin protection
Reset/standby
protection
18.6.2
Software protection is set up in any of three ways: by disabling the downloading of on-chip
programs for programming and erasing, by means of a key code, and by the RAM-emulation
register.
Software Protection
Description
The input of a low-level signal on the
FWE pin clears the FWE bit of
FCCS and the device enters a
program/erase-protected state.
A power-on reset (including a
power-on reset by the WDT) and
entry to standby mode reinitialize
the program/erase interface register
and the device enters a
program/erase-protected state.
Resetting by means of the RES pin
after power is initially supplied will
not make the device enter the reset
state unless the RES pin is held low
until oscillation has stabilized. In the
case of a reset during operation,
hold the RES pin low for the RES
pulse width that is specified in the
section on AC characteristics
section. If the device is reset during
programming or erasure, data
values in the flash memory are not
guaranteed. In this case, after
keeping the RES pin low for at least
100 s, execute erasure and then
execute programming again.
Download
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Rev. 2.0, 06/04, page 631 of 980
Function to be Protected
Program/Erase