HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 607

• Manufacturer Part Number: HD64F3029XBL25V
• Description: MCU 5V 512K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3029XBL25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Emulation function of flash memory by using the on-chip RAM
As flash memory is overlapped with part of the on-chip RAM, the flash memory programming
can be emulated in real time.
Protection modes
There are two protection modes: software protection by the register setting and hardware
protection by the FWE pin. The protection state for flash memory programming/erasing can be
set.
When abnormalities, such as runaway of programming/erasing are detected, these modes enter
the error protection state and the programming/erasing processing is suspended.
Programming/erasing time
The flash memory programming time is 3 ms (typ) in 128-byte simultaneous programming
and 25 s per byte. The erasing time is 1000 ms (typ) per 64 kbyte block.
Number of programming
The number of flash memory programming can be up to minimum 100 times.
Rev. 2.0, 06/04, page 578 of 980