D12321VF25V Renesas Electronics America, D12321VF25V Datasheet - Page 218

IC H8S/2300 MCU ROMLESS 128QFP

D12321VF25V

Manufacturer Part Number
D12321VF25V
Description
IC H8S/2300 MCU ROMLESS 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of D12321VF25V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
86
Program Memory Type
ROMless
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12321VF25V
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
D12321VF25V
Manufacturer:
Renesas
Quantity:
675
Part Number:
D12321VF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller
6.5.6
Figure 6.15 shows the basic access timing for DRAM space. The basic DRAM access timing is 4
states. Unlike the basic bus interface, the corresponding bits in ASTCR control only enabling or
disabling of wait insertion, and do not affect the number of access states. When the corresponding
bit in ASTCR is cleared to 0, wait states cannot be inserted in the DRAM access cycle.
The 4 states of the basic timing consist of one T
output cycle), and two T
Rev.6.00 Sep. 27, 2007 Page 186 of 1268
REJ09B0220-0600
Note: n = 2 to 5
Read
Write
Basic Timing
CAS, LCAS
CSn (RAS)
HWR (WE)
HWR (WE)
D
D
A
15
15
23
to D
to D
to A
c
φ
0
0
0
(column address output cycle) states, T
Figure 6.15 Basic Access Timing
T
p
p
(precharge cycle) state, one T
Row
T
r
T
c1
c1
and T
Column
c2
.
T
r
c2
(row address

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