D12321VF25V Renesas Electronics America, D12321VF25V Datasheet - Page 229

• Manufacturer Part Number: D12321VF25V
• Description: IC H8S/2300 MCU ROMLESS 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12321VF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 86
• Program Memory Type: ROMless
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Self-Refreshing: A self-refresh mode (battery backup mode) is provided for DRAM as a kind of
standby mode. In this mode, refresh timing and refresh addresses are generated within the DRAM.
To select self-refreshing, set the RFSHE bit and RMODE bit in DRAMCR to 1. Then, when a
SLEEP instruction is executed to enter software standby mode, the CAS and RAS signals are
output and DRAM enters self-refresh mode, as shown in figure 6.27.
When software standby mode is exited, the RMODE bit is cleared to 0 and self-refresh mode is
cleared.
When switching to software standby mode, if there is a CBR refresh request, CBR refreshing is
executed before self-refresh mode is entered.
Note: n = 2 to 5
CAS, LCAS
CSn (RAS)
CAS, LCAS
Note: n = 2 to 5
Figure 6.26 CBR Refresh Timing (When RCW = 1, RLW1 = 0, RLW0 = 1)
CSn (RAS)
HWR (WE)
φ
φ
T
T
Rp
Rp
Figure 6.27 Self-Refresh Timing
T
Rcr
T
Rr
High
T
Rc1
Rev.6.00 Sep. 27, 2007 Page 197 of 1268
Software
standby
T
Rw
Section 6 Bus Controller
T
T
Rc2
Rc3
REJ09B0220-0600