D12321VF25V Renesas Electronics America, D12321VF25V Datasheet - Page 926

• Manufacturer Part Number: D12321VF25V
• Description: IC H8S/2300 MCU ROMLESS 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12321VF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 86
• Program Memory Type: ROMless
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Section 19 ROM
Table 19.57 PROM Mode Commands
Command Name
Memory read mode
Auto-program mode
Auto-erase mode
Status read mode
Legend:
RA: Read address
PA: Program address
Notes: 1. In auto-program mode, 129 cycles are required for command writing by a simultaneous
19.29.4 Memory Read Mode
• After the end of an auto-program, auto-erase, or status read operation, the command wait state
• Command writes can be performed in memory read mode, just as in the command wait state.
• Once memory read mode has been entered, consecutive reads can be performed.
• After power-on, memory read mode is entered.
Rev.6.00 Sep. 27, 2007 Page 894 of 1268
REJ09B0220-0600
is entered. To read memory contents, a transition must be made to memory read mode by
means of a command write before the read is executed.
2. In memory read mode, the number of cycles depends on the number of address write
128-byte write.
cycles (n).
Number
of Cycles
1 + n
129
2
2
Mode
Write
Write
Write
Write
Address Data
X
X
X
X
1st Cycle
H'00
H'40
H'20
H'71
Mode
Read
Write
Write
Write
2nd Cycle
Address Data
RA
PA
X
X
Dout
Din
H'20
H'71