D12321VF25V Renesas Electronics America, D12321VF25V Datasheet - Page 910

• Manufacturer Part Number: D12321VF25V
• Description: IC H8S/2300 MCU ROMLESS 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12321VF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 86
• Program Memory Type: ROMless
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Section 19 ROM
19.25
In the on-board programming modes, flash memory programming and erasing is performed by
software, using the CPU. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transition to these modes can be made for
addresses H'000000 to H'03FFFF by setting the PSU1, ESU1, P1, E1, PV1, and EV1 bits in
FLMCR1, and for addresses H'040000 to H'07FFFF by setting the PSU2, ESU2, P2, E2, PV2, and
EV2 bits in FLMCR2.
The flash memory cannot be read while being programmed or erased. Therefore, the program that
controls flash memory programming/erasing (the programming control program) should be
located and executed in on-chip RAM, external memory, or flash memory except for the above
address areas. When the program is located in external memory, an instruction for programming
the flash memory and the following instruction should be located in on-chip RAM. The DMAC or
DTC should not be activated before or after the instruction for programming the flash memory is
executed.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE1, ESU1, PSU1, EV1, PV1,
19.25.1 Program Mode (n = 1 for addresses H'000000 to H'03FFFF and n = 2 for addresses
Follow the procedure shown in the program/program-verify flowchart in figure 19.70 to write data
or programs to flash memory. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 128 bytes at a
time.
For the wait times (x, y, z1, z2, z3 α, ß, γ, ε, η, and θ) after bits are set or cleared in flash memory
control register n (FLMCRn) and the maximum number of programming operations (N), see
section 22.2.6, Flash Memory Characteristics.
Rev.6.00 Sep. 27, 2007 Page 878 of 1268
REJ09B0220-0600
2. When programming or erasing, set FWE to 1 (programming/erasing is not performed
3. Perform programming in the erased state. Do not perform additional programming on
4. Do not program addresses H'000000 to H'03FFFF and H'040000 to H'07FFFF
Programming/Erasing Flash Memory
H'040000 to H'07FFFF)
E1, and P1 bits in FLMCR1 or setting/resetting of the SWE2, ESU2, PSU2, EV2, PV2,
E2, and P2 bits in FLMCR2 is executed by a program in flash memory.
when FWE = 0).
previously programmed addresses.
simultaneously. Operation is not guaranteed when programming is performed
simultaneously.