D12321VF25V Renesas Electronics America, D12321VF25V Datasheet - Page 897

• Manufacturer Part Number: D12321VF25V
• Description: IC H8S/2300 MCU ROMLESS 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12321VF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 86
• Program Memory Type: ROMless
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Bit 0—Program 2 (P2): Selects program mode transition or clearing for H'040000 to H'07FFFF.
Do not set the SWE2, PSU2, ESU2, EV2, PV2, or E2 bit at the same time.
Bit 0
P2
0
1
19.23.3 Erase Block Register 1 (EBR1)
EBR1 is an 8-bit register that specifies the flash memory erase area block by block. EBR1 is
initialized to H'00 by a reset, in hardware standby mode and software standby mode, when a low
level is being input to the FWE pin, and when the SWE1 bit in FLMCR1 is not set when a high
level is being input to the FWE pin. When a bit in EBR1 is set, the corresponding block can be
erased. Other blocks are erase-protected. Set only one bit in EBR1 and EBR2 together (setting
more than one bit will automatically clear all EBR1 and EBR2 bits to 0). When on-chip flash
memory is disabled, a read will return H'00 and writes are invalid.
The flash memory block configuration is shown in table 19.49
Bit
EBR1
Initial value :
R/W
Description
Program mode cleared
Transition to program mode
[Setting condition]
When FWE = 1, SWE2 = 1, and PSU2 = 1
:
:
R/W
EB7
7
0
R/W
EB6
6
0
R/W
EB5
5
0
EB4
R/W
4
0
Rev.6.00 Sep. 27, 2007 Page 865 of 1268
R/W
EB3
3
0
R/W
EB2
2
0
REJ09B0220-0600
Section 19 ROM
R/W
EB1
1
0
(Initial value)
EB0
R/W
0
0