D12321VF25V Renesas Electronics America, D12321VF25V Datasheet - Page 840

• Manufacturer Part Number: D12321VF25V
• Description: IC H8S/2300 MCU ROMLESS 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12321VF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 86
• Program Memory Type: ROMless
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Section 19 ROM
Bit 3—RAM Select (RAMS): Specifies selection or non-selection of flash memory emulation in
RAM. When RAMS = 1, all flash memory blocks are program/erase-protected.
Bit 3
RAMS
0
1
Bits 2 to 0—Flash Memory Area Selection (RAM2 to RAM0): These bits are used together
with bit 3 to select the flash memory area to be overlapped with RAM (see table 19.29).
Table 19.29 Flash Memory Area Divisions
RAM Area
H'FFDC00 to H'FFEBFF
H'000000 to H'000FFF
H'001000 to H'001FFF
H'002000 to H'002FFF
H'003000 to H'003FFF
H'004000 to H'004FFF
H'005000 to H'005FFF
H'006000 to H'006FFF
H'007000 to H'007FFF
Rev.6.00 Sep. 27, 2007 Page 808 of 1268
REJ09B0220-0600
Description
Emulation not selected
Program/erase-protection of all flash memory blocks is disabled
Emulation selected
Program/erase-protection of all flash memory blocks is enabled
Block Name
RAM area, 4 kbytes
EB0 (4 kbytes)
EB1 (4 kbytes)
EB2 (4 kbytes)
EB3 (4 kbytes)
EB4 (4 kbytes)
EB5 (4 kbytes)
EB6 (4 kbytes)
EB7 (4 kbytes)
RAMS
0
1
1
1
1
1
1
1
1
RAM2
*
0
0
0
0
1
1
1
1
RAM1
*
0
0
1
1
0
0
1
1
(Initial value)
*: Don’t care
RAM0
*
0
1
0
1
0
1
0
1