D12321VF25V Renesas Electronics America, D12321VF25V Datasheet - Page 821

• Manufacturer Part Number: D12321VF25V
• Description: IC H8S/2300 MCU ROMLESS 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12321VF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 86
• Program Memory Type: ROMless
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

19.11.10 Notes on Memory Programming
• When programming addresses which have previously been programmed, carry out auto-
• When performing programming using PROM mode on a chip that has been
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas
19.12
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
PROM mode are summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in
excess of the rating can permanently damage the device. Use a PROM programmer that supports
the Renesas microcomputer device type with 512-kbyte on-chip flash memory (FZTAT512V3A).
Do not select the HN27C4096 setting for the PROM programmer, and only use the specified
socket adapter. Failure to observe these points may result in damage to the device.
Powering on and off: When applying or disconnecting V
the flash memory in the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery.
Use the recommended algorithm when programming and erasing flash memory: The
recommended algorithm enables programming and erasing to be carried out without subjecting the
device to voltage stress or sacrificing program data reliability. When setting the P or E bit in
FLMCR1, the watchdog timer should be set beforehand as a precaution against program runaway,
etc.
erasing before auto-programming.
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
2. Auto-programming should be performed once only on the same address block.
Flash Memory Programming and Erasing Precautions
Technology. For other chips for which the erasure history is unknown, it is
recommended that auto-erasing be executed to check and supplement the initialization
(erase) level.
Additional programming cannot be carried out on address blocks that have already
been programmed.
Rev.6.00 Sep. 27, 2007 Page 789 of 1268
CC
power, fix the RES pin low and place
REJ09B0220-0600
Section 19 ROM