D12321VF25V Renesas Electronics America, D12321VF25V Datasheet - Page 220
D12321VF25V
Manufacturer Part Number
D12321VF25V
Description
IC H8S/2300 MCU ROMLESS 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.D12322RVF25V.pdf
(1304 pages)
Specifications of D12321VF25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
86
Program Memory Type
ROMless
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Available stocks
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Price
Company:
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D12321VF25V
Manufacturer:
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Quantity:
135
Company:
Part Number:
D12321VF25V
Manufacturer:
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Section 6 Bus Controller
6.5.8
Wait Control
There are two ways of inserting wait states in a DRAM access cycle: program wait insertion and
pin wait insertion using the WAIT pin.
Program Wait Insertion: When the bit in ASTCR corresponding to an area designated as DRAM
space is set to 1, from 0 to 3 wait states can be inserted automatically between the T
state and T
c1
c2
state, according to the settings of WCRH and WCRL.
Pin Wait Insertion: When the WAITE bit in BCRH is set to 1, wait input by means of the WAIT
pin is enabled regardless of the setting of the AST bit in ASTCR. When DRAM space is accessed
in this state, a program wait is first inserted. If the WAIT pin is low at the falling edge of φ in the
state is inserted. If the WAIT pin is held low, T
last T
or T
state, another T
states are inserted
c1
w
w
w
until it goes high.
Figure 6.17 shows an example of wait state insertion timing.
Rev.6.00 Sep. 27, 2007 Page 188 of 1268
REJ09B0220-0600
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