D12321VF25V Renesas Electronics America, D12321VF25V Datasheet - Page 901
D12321VF25V
Manufacturer Part Number
D12321VF25V
Description
IC H8S/2300 MCU ROMLESS 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.D12322RVF25V.pdf
(1304 pages)
Specifications of D12321VF25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
86
Program Memory Type
ROMless
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Available stocks
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Bit 3—RAM Select (RAMS): Specifies selection or non-selection of flash memory emulation in
RAM. When RAMS = 1, all flash memory blocks are program/erase-protected.
Bit 3
RAMS
0
1
Bits 2 to 0—Flash Memory Area Selection (RAM2 to RAM0): These bits are used together
with bit 3 to select the flash memory area to be overlapped with RAM (see table 19.50).
Table 19.50 Flash Memory Area Divisions
RAM Area
H'FFDC00 to H'FFEBFF
H'000000 to H'000FFF
H'001000 to H'001FFF
H'002000 to H'002FFF
H'003000 to H'003FFF
H'004000 to H'004FFF
H'005000 to H'005FFF
H'006000 to H'006FFF
H'007000 to H'007FFF
Description
Emulation not selected
Program/erase-protection of all flash memory blocks is disabled
Emulation selected
Program/erase-protection of all flash memory blocks is enabled
Block Name
RAM area, 4 kbytes
EB0 (4 kbytes)
EB1 (4 kbytes)
EB2 (4 kbytes)
EB3 (4 kbytes)
EB4 (4 kbytes)
EB5 (4 kbytes)
EB6 (4 kbytes)
EB7 (4 kbytes)
RAMS
1
1
1
1
1
1
1
1
0
Rev.6.00 Sep. 27, 2007 Page 869 of 1268
RAM2
*
0
0
0
0
1
1
1
1
RAM1
*
0
0
1
1
0
0
1
1
REJ09B0220-0600
Section 19 ROM
(Initial value)
*: Don’t care
RAM0
0
1
0
1
0
1
0
1
*
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