D12321VF25V Renesas Electronics America, D12321VF25V Datasheet - Page 822

IC H8S/2300 MCU ROMLESS 128QFP

D12321VF25V

Manufacturer Part Number
D12321VF25V
Description
IC H8S/2300 MCU ROMLESS 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of D12321VF25V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
86
Program Memory Type
ROMless
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12321VF25V
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
D12321VF25V
Manufacturer:
Renesas
Quantity:
675
Part Number:
D12321VF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 19 ROM
Do not set or clear the SWE bit during execution of a program in flash memory: Wait for at
least 100 µs after clearing the SWE bit before executing a program or reading data in flash
memory. When the SWE bit is set, data in flash memory can be rewritten, but when SWE = 1,
flash memory can only be read in program-verify or erase-verify mode. Access flash memory only
for verify operations (verification during programming/erasing). Also, do not clear the SWE bit
during programming, erasing, or verifying.
Similarly, when using the RAM emulation function the SWE bit must be cleared before executing
a program or reading data in flash memory.
However, the RAM area overlapping flash memory space can be read and written to regardless of
whether the SWE bit is set or cleared.
Do not use interrupts while flash memory is being programmed or erased: When flash
memory is programmed or erased, all interrupt requests, including NMI, should be disabled to
give priority to program/erase operations.
Do not perform additional programming. Erase the memory before reprogramming: In on-
board programming, perform only one programming operation on a 128-byte programming unit
block. In PROM mode, too, perform only one programming operation on a 128-byte programming
unit block. Programming should be carried out with the entire programming unit block erased.
Before programming, check that the chip is correctly mounted in the PROM programmer:
Overcurrent damage to the device can result if the index marks on the PROM programmer socket,
socket adapter, and chip are not correctly aligned.
Do not touch the socket adapter or chip during programming: Touching either of these can
cause contact faults and write errors.
Rev.6.00 Sep. 27, 2007 Page 790 of 1268
REJ09B0220-0600

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