D12321VF25V Renesas Electronics America, D12321VF25V Datasheet - Page 898

• Manufacturer Part Number: D12321VF25V
• Description: IC H8S/2300 MCU ROMLESS 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12321VF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 86
• Program Memory Type: ROMless
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Section 19 ROM
19.23.4 Erase Block Registers 2 (EBR2)
EBR2 is an 8-bit register that specifies the flash memory erase area block by block. Bits 3 to 0 in
EBR2 are initialized to H'00 by a reset, in hardware standby mode and software standby mode,
when a low level is being input to the FWE pin, and when the SWE1 bit in FLMCR1 is not set
when a high level is being input to the FWE pin. Bits 7 to 4 are initialized to 0 when a low level is
input to the FWE pin, and when a high level is input to the FWE pin and the SWE2 bit in
FLMCR2 is not set. When a bit in EBR2 is set, the corresponding block can be erased. Other
blocks are erase-protected. Set only one bit in EBR2 and EBR1 together (setting more than one bit
will automatically clear all EBR1 and EBR2 bits to 0). When on-chip flash memory is disabled, a
read will return H'00, and writes are invalid.
The flash memory block configuration is shown in table 19.49.
Rev.6.00 Sep. 27, 2007 Page 866 of 1268
REJ09B0220-0600
Bit
EBR2
Initial value :
R/W
:
:
EB15
R/W
7
0
EB14
R/W
6
0
EB13
R/W
5
0
EB12
R/W
4
0
EB11
R/W
3
0
EB10
R/W
2
0
R/W
EB9
1
0
R/W
EB8
0
0