R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 1197

• Manufacturer Part Number: R4F24278NVFQU
• Description: MCU 512K/48K 2.7-5.5V 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24278NVFQU

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 98
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

H8S/2427, H8S/2427R, H8S/2425 Group
Section 23 Flash Memory
The user ROM and user boot ROM are switched only while the user ROM is being erased.
Because the user boot ROM is hidden while the user ROM is being erased, the procedure program
must be executed in an area other than flash memory. After erasure completes, switch the memory
MATs again to return to the first state.
Memory MAT switching is enabled by writing the defined value to the FMMS bit in FLMMATS.
However note that access to a memory MAT is not allowed until memory MAT switching is
completed. During memory MAT switching, the LSI is in an unstable state, e.g. if an interrupt
occurs, from which memory MAT the interrupt vector is read is undetermined. Perform memory
MAT switching in accordance with the description in section 23.13, Switching between User
ROM and User Boot ROM.
Except for memory MAT switching, the erasing procedure is the same as that in user program
mode.
REJ09B0565-0100 Rev. 1.00
Page 1167 of 1448
Jul 22, 2010