R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 310

• Manufacturer Part Number: R4F24278NVFQU
• Description: MCU 512K/48K 2.7-5.5V 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24278NVFQU

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 98
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Section 7 Bus Controller (BSC)
In some synchronous DRAMs provided with a self-refresh mode, the interval between clearing
self-refreshing and the next command is specified. A setting can be made in bits TPCS2 to TPCS0
in REFCR to make the precharge time after self-refreshing from 1 to 7 states longer than the
normal precharge time. In this case, too, normal precharging is performed according to the setting
of bits TPC1 and TPC0 in DRACCR, and therefore a setting should be made to give the optimum
post-self-refresh precharge time, including this time. Figure 7.70 shows an example of the timing
when the precharge time after self-refreshing is extended by 2 states.
Page 280 of 1448
DQMU, DQML
Precharge-sel
Address bus
Figure 7.70 Example of Timing when Precharge Time after Self-Refreshing Is Extended
SDRAMφ
Data bus
CKE
RAS
CAS
WE
by 2 States (TPCS2 to TPCS0 = H'2, TPC1 = 0, TPC0 = 0, CAS Latency 2)
Software
standby
T
NOP
Rc2
T
Rp3
T
Rp1
T
Rc2
PALL
Column
address
T
p
Continuous synchronous DRAM space write
H8S/2427, H8S/2427R, H8S/2425 Group
address
address
ACTV
Row
Row
T
r
T
NOP
REJ09B0565-0100 Rev. 1.00
c1
Column address
T
WRIT
cl
Jul 22, 2010
NOP
T
c2