R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 263

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R4F24278NVFQU

Manufacturer Part Number
R4F24278NVFQU
Description
MCU 512K/48K 2.7-5.5V 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet

Specifications of R4F24278NVFQU

Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
98
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
64K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
R4F24278NVFQU
Manufacturer:
REALTEK
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2 300
Part Number:
R4F24278NVFQU
Manufacturer:
Renesas Electronics America
Quantity:
10 000
H8S/2427, H8S/2427R, H8S/2425 Group
7.7.7
If the RAST bit is set to 1 in DRAMCR, the RAS signal goes low from the beginning of the T
state, and the row address hold time and DRAM read access time are changed relative to the fall of
the RAS signal. Use the optimum setting according to the DRAM connected and the operating
frequency of this LSI. Figure 7.35 shows an example of the timing when the RAS signal goes low
from the beginning of the T
REJ09B0565-0100 Rev. 1.00
Jul 22, 2010
Read
Write
Note: n = 2 to 5
Figure 7.35 Example of Access Timing when RAS Signal Goes Low from Beginning
Row Address Output State Control
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
r
state.
T
of T
p
Row address
r
State (CAST = 0)
T
r
High
High
T
c1
Column address
Section 7 Bus Controller (BSC)
T
c2
Page 233 of 1448
r

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