R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 293

• Manufacturer Part Number: R4F24278NVFQU
• Description: MCU 512K/48K 2.7-5.5V 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24278NVFQU

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 98
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

H8S/2427, H8S/2427R, H8S/2425 Group
7.8.8
When the command interval specification from the ACTV command to the next READ/WRIT
command cannot be satisfied, 1 to 3 states (Trw) that output the NOP command can be inserted
between the Tr cycle that outputs the ACTV command and the Tc1 cycle that outputs the column
address by setting the RCD1 and RCD0 bits of DRACCR. Use the optimum setting for the wait
time according to the synchronous DRAM connected and the operating frequency of this LSI.
Figure 7.58 shows an example of the timing when the one Trw state is set.
REJ09B0565-0100 Rev. 1.00
Jul 22, 2010
Figure 7.58 Example of Access Timing when Row Address Output Hold State Is 1 State
Read
Write
Row Address Output State Control
DQMU, DQML
DQMU, DQML
Precharge-sel
Address bus
SDRAMφ
Data bus
Data bus
CKE
CKE
RAS
RAS
CAS
CAS
WE
WE
(RCD1 = 0, RCD0 = 1, SDWCD = 0, CAS Latency 2)
Column
address
PALL
PALL
T
p
ACTV
ACTV
T
r
Row address
Row address
NOP
High
High
T
rw
NOP
READ
T
c1
Column address
WRIT
T
cl
Section 7 Bus Controller (BSC)
NOP
NOP
T
c2
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