R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 264

• Manufacturer Part Number: R4F24278NVFQU
• Description: MCU 512K/48K 2.7-5.5V 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24278NVFQU

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 98
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Section 7 Bus Controller (BSC)
If a row address hold time or read access time is necessary, making a setting in bits RCD1 and
RCD0 in DRACCR allows from one to three T
to be inserted between the T
the column address is output. Use the setting that gives the optimum row address signal hold time
relative to the falling edge of the RAS signal according to the DRAM connected and the operating
frequency of this LSI. Figure 7.36 shows an example of the timing when one T
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Read
Write
Note: n = 2 to 5
Figure 7.36 Example of Timing with One Row Address Output Maintenance State
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
r
cycle, in which the RAS signal goes low, and the T
T
p
(RAST = 0, CAST = 0)
Row address
T
r
rw
states, in which row address output is maintained,
T
rw
H8S/2427, H8S/2427R, H8S/2425 Group
High
High
T
Column address
c1
REJ09B0565-0100 Rev. 1.00
rw
c1
state is set.
cycle, in which
T
c2
Jul 22, 2010