R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 261

• Manufacturer Part Number: R4F24278NVFQU
• Description: MCU 512K/48K 2.7-5.5V 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24278NVFQU

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 98
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

H8S/2427, H8S/2427R, H8S/2425 Group
Section 7 Bus Controller (BSC)
When DRAM space is accessed, the RD signal is output as the OE signal for DRAM. When
connecting DRAM provided with an EDO page mode, the OE signal should be connected to the
(OE) pin of the DRAM. Setting the OEE bit to 1 in DRAMCR enables the OE signal for DRAM
space to be output from a dedicated OE pin. In this case, the OE signal for DRAM space is output
from both the RD pin and the (OE) pin, but in external read cycles for other than DRAM space,
the signal is output only from the RD pin.
7.7.6
Column Address Output Cycle Control
The column address output cycle can be changed from 2 states to 3 states by setting the CAST bit
to 1 in DRAMCR. Use the setting that gives the optimum specification values (CAS pulse width,
etc.) according to the DRAM connected and the operating frequency of this LSI. Figure 7.34
shows an example of the timing when a 3-state column address output cycle is selected.
REJ09B0565-0100 Rev. 1.00
Page 231 of 1448
Jul 22, 2010