R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 280

• Manufacturer Part Number: R4F24278NVFQU
• Description: MCU 512K/48K 2.7-5.5V 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24278NVFQU

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 98
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Section 7 Bus Controller (BSC)
In some DRAMs provided with a self-refresh mode, the RAS signal precharge time immediately
after self-refreshing is longer than the normal precharge time. A setting can be made in bits
TPCS2 to TPCS0 in REFCR to make the precharge time immediately after self-refreshing from 1
to 7 states longer than the normal precharge time. In this case, too, normal precharging is
performed according to the setting of bits TPC1 and TPC0 in DRACCR, and therefore a setting
should be made to give the optimum post-self-refresh precharge time, including this time. Figure
7.52 shows an example of the timing when the precharge time immediately after self-refreshing is
extended by 2 states.
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UCAS, LCAS
Address bus
Note: n = 2 to 5
Figure 7.52 Example of Timing when Precharge Time after Self-Refreshing Is Extended
RASn (CSn)
WE (HWR)
Data bus
OE (RD)
φ
Software standby
High
T
Rc3
T
Rc4
by 2 States
T
Rp1
T
Rp2
T
H8S/2427, H8S/2427R, H8S/2425 Group
p
DRAM space write
T
r
REJ09B0565-0100 Rev. 1.00
T
c1
T
Jul 22, 2010
c2