R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 351

• Manufacturer Part Number: R4F24278NVFQU
• Description: MCU 512K/48K 2.7-5.5V 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24278NVFQU

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 98
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

H8S/2427, H8S/2427R, H8S/2425 Group
7.15.4
(1)
Be sure to set the clock to be connected to the synchronous DRAM to SDRAMφ.
(2)
In the continuous synchronous DRAM space, insertion of the wait state by the WAIT pin is
disabled regardless of the setting of the WAITE bit in BCR.
(3)
This LSI cannot carry out the bank control of the synchronous DRAM. All banks are selected.
(4)
The burst read/burst write mode of the synchronous DRAM is not supported. When setting the
mode register of the synchronous DRAM, set to the burst read/single write and set the burst length
to 1.
(5)
When connecting a synchronous DRAM having CAS latency of 1, set the BE bit to 0 in the
DRAMCR.
Note: The synchronous DRAM interface is not supported by the H8S/2427 Group and H8S/2425
REJ09B0565-0100 Rev. 1.00
Jul 22, 2010
Connection Clock
WAIT Pin
Bank Control
Burst Access
CAS Latency
Group.
Notes on Usage of the Synchronous DRAM
Section 7 Bus Controller (BSC)
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