R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 323

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R4F24278NVFQU

Manufacturer Part Number
R4F24278NVFQU
Description
MCU 512K/48K 2.7-5.5V 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet

Specifications of R4F24278NVFQU

Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
98
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
64K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
R4F24278NVFQU
Manufacturer:
REALTEK
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Part Number:
R4F24278NVFQU
Manufacturer:
Renesas Electronics America
Quantity:
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H8S/2427, H8S/2427R, H8S/2425 Group
(2)
If an external write occurs after an external read while the ICIS0 bit is set to 1 in BCR, an idle
cycle is inserted at the start of the write cycle.
Figure 7.78 shows an example of the operation in this case. In this example, bus cycle A is a read
cycle for ROM with a long output floating time, and bus cycle B is a CPU write cycle. In (a), an
idle cycle is not inserted, and a collision occurs in bus cycle B between the read data from ROM
and the CPU write data. In (b), an idle cycle is inserted, and a data collision is prevented.
REJ09B0565-0100 Rev. 1.00
Jul 22, 2010
Write after Read
Address bus
CS (area A)
CS (area B)
Data bus
HWR
Figure 7.78 Example of Idle Cycle Operation (Write after Read)
RD
φ
(a) No idle cycle insertion
T
1
(ICIS0 = 0)
Bus cycle A
Long output floating time
T
2
T
3
Bus cycle B
T
1
T
2
Data collision
Address bus
CS (area A)
CS (area B)
Data bus
HWR
RD
φ
T
(b) Idle cycle insertion
1
Bus cycle A
(ICIS0 = 1, initial value)
T
2
T
3
Section 7 Bus Controller (BSC)
Idle cycle
T
i
Bus cycle B
T
1
Page 293 of 1448
T
2

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