R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 296

• Manufacturer Part Number: R4F24278NVFQU
• Description: MCU 512K/48K 2.7-5.5V 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24278NVFQU

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 98
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Section 7 Bus Controller (BSC)
7.8.10
By setting the SDWCD bit of the DRACCR to 1, the CAS latency control cycle (Tc1) that is
inserted by the WTCRB register in the write access of the synchronous DRAM can be disabled.
Disabling the CAS latency control cycle can reduce the write-access cycle count as compared to
synchronous DRAM read access. Figure 7.60 shows the write access timing when the CAS
latency control cycle is disabled.
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Figure 7.60 Example of Write Access Timing when CAS Latency Control Cycle Is Disabled
DQMU, DQML
Precharge-sel
Address bus
Bus Cycle Control in Write Cycle
SDRAMφ
Data bus
CKE
RAS
CAS
WE
Column address
PALL
T
p
Row address
Row address
(SDWCD = 1)
ACTV
T
r
High
NOP
T
c1
Column address
H8S/2427, H8S/2427R, H8S/2425 Group
T
WRIT
c2
REJ09B0565-0100 Rev. 1.00
Jul 22, 2010