DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 726

• Manufacturer Part Number: DF2148RTE20IV
• Description: MCU 5V 128K I-TEMP,PB-FREE, 100-
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2148RTE20IV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: Host Interface, I²C, IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 22 ROM
Notes on Use of Erase-Program Mode
22.10.7 Status Read Mode
Table 22.18 AC Characteristics in Status Read Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
OE output delay time
Disable delay time
CE output delay time
WE rise time
WE fall time
Rev. 4.00 Sep 27, 2006 page 680 of 1130
REJ09B0327-0400
Auto-erase mode supports only entire memory erasing.
Do not perform a command write during auto-erasing.
Confirm normal end of auto-erasing by checking FO6. Alternatively, status read mode can also
be used for this purpose (FO7 status polling uses the auto-erase operation end identification
pin).
The status polling FO6 and FO7 pin information is retained until the next command write.
Until the next command write is performed, reading is possible by enabling CE and OE.
Status read mode is used to identify what type of abnormal end has occurred. Use this mode
when an abnormal end occurs in auto-program mode or auto-erase mode.
The return code is retained until a command write for other than status read mode is
performed.
CC
= 5.0 V ±10%, V
(Mask ROM Version, H8S/2148 F-ZTAT, H8S/2147N F-ZTAT, H8S/2144 F-ZTAT, and H8S/2142 F-ZTAT)
SS
= 0 V, T
Symbol
t
t
t
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
oe
df
ce
r
f
a
= 25°C ±5°C
Min
20
0
0
50
50
70
—
—
—
—
—
Max
—
—
—
—
—
—
150
100
150
30
30
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns