DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 911

MCU 5V 128K I-TEMP,PB-FREE, 100-

DF2148RTE20IV

Manufacturer Part Number
DF2148RTE20IV
Description
MCU 5V 128K I-TEMP,PB-FREE, 100-
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2148RTE20IV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
Host Interface, I²C, IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
26.5.2
Table 26.45 lists the DC characteristics. Permitted output current values and bus drive
characteristics are shown in tables 26.46 and 26.47, respectively.
Table 26.45 DC Characteristics (1)
Conditions: V
Item
Schmitt
trigger input
voltage
Input high
voltage
Input low
voltage
Output high
voltage
Output low
voltage
DC Characteristics
P67 to P60 *
KIN15 to KIN8 *
IRQ2 to IRQ0 *
IRQ5 to IRQ3
RES, STBY,
NMI, MD1,
MD0
EXTAL,
PA7 to PA0 *
Port 7
Input pins except
(1) and (2)
above
RES, STBY,
MD1, MD0
PA7 to PA0
NMI, EXTAL,
input pins except
(1) and (3)
above
All output pins *
All output pins
(except RESO) *
Ports 1 to 3
RESO
V
T
a
CC
SS
= –40 to +85°C *
= AV
= 5.0 V ±10%, AV
SS
*
1
2
5
*
= 0 V, T
5
3
,
4
,
5
,
4
(1)
(2)
(3)
8
(wide-range specifications)
a
= –20 to +75°C *
CC
Symbol Min
V
V
V
V
V
V
V
*
T
T
T
IH
IL
OH
OL
+
+
1
– V
= 5.0 V ±10%, AV
T
1.0
0.4
V
V
2.0
2.0
–0.3
–0.3
–0.3
V
3.5
CC
CC
CC
–0.7
–0.5
8
0.7
(regular specifications),
Rev. 4.00 Sep 27, 2006 page 865 of 1130
Typ
ref
*
Section 26 Electrical Characteristics
1
= 4.5 V to AV
Max
V
V
V
AV
V
0.5
1.0
0.8
0.4
1.0
0.4
CC
CC
CC
CC
CC
+0.3
+0.3
+0.3
+0.3 V
0.7
CC
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
,
REJ09B0327-0400
Test
Conditions
I
I
I
I
I
OH
OH
OL
OL
OL
= 1.6 mA
= 10 mA
= 2.6 mA
= –200 µA
= –1 mA

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