DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 771

• Manufacturer Part Number: DF2148RTE20IV
• Description: MCU 5V 128K I-TEMP,PB-FREE, 100-
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2148RTE20IV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: Host Interface, I²C, IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

23.10.6 Auto-Erase Mode
AC Characteristics
Table 23.17 AC Characteristics in Auto-Erase Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
Status polling start time
Status polling access time
Memory erase time
WE rise time
WE fall time
FA17 to FA0
FO7 to FO0
Section 23 ROM
FO7
FO6
WE
OE
CE
CC
= 3.3 V ±0.3 V, V
t
t
ces
f
Figure 23.21 Auto-Erase Mode Timing Waveforms
t
wep
H'20
CL
t
ds
(H8S/2148 F-ZTAT A-Mask Version, H8S/2147 F-ZTAT A-Mask Version, H8S/2144 F-ZTAT A-Mask Version)
t
t
ceh
dh
in
t
r
Symbol
t
t
t
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
ests
spa
erase
r
f
t
nxtc
SS
= 0 V, T
a
= 25°C ±5°C
DL
H'20
Min
20
0
0
50
50
70
1
—
100
—
—
in
t
erase
Erase normal end
confirmation signal
Erase end identification
signal
t
ests
Rev. 4.00 Sep 27, 2006 page 725 of 1130
(100 to 40000 ms)
t
spa
Max
—
—
—
—
—
—
—
150
40000
30
30
FO0 to FO5 = 0
REJ09B0327-0400
t
Unit
µs
ns
ns
ns
ns
ns
ms
ns
ms
ns
ns
nxtc