DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 771

MCU 5V 128K I-TEMP,PB-FREE, 100-

DF2148RTE20IV

Manufacturer Part Number
DF2148RTE20IV
Description
MCU 5V 128K I-TEMP,PB-FREE, 100-
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2148RTE20IV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
Host Interface, I²C, IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
23.10.6 Auto-Erase Mode
AC Characteristics
Table 23.17 AC Characteristics in Auto-Erase Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
Status polling start time
Status polling access time
Memory erase time
WE rise time
WE fall time
FA17 to FA0
FO7 to FO0
Section 23 ROM
FO7
FO6
WE
OE
CE
CC
= 3.3 V ±0.3 V, V
t
t
ces
f
Figure 23.21 Auto-Erase Mode Timing Waveforms
t
wep
H'20
CL
t
ds
(H8S/2148 F-ZTAT A-Mask Version, H8S/2147 F-ZTAT A-Mask Version, H8S/2144 F-ZTAT A-Mask Version)
t
t
ceh
dh
in
t
r
Symbol
t
t
t
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
ests
spa
erase
r
f
t
nxtc
SS
= 0 V, T
a
= 25°C ±5°C
DL
H'20
Min
20
0
0
50
50
70
1
100
in
t
erase
Erase normal end
confirmation signal
Erase end identification
signal
t
ests
Rev. 4.00 Sep 27, 2006 page 725 of 1130
(100 to 40000 ms)
t
spa
Max
150
40000
30
30
FO0 to FO5 = 0
REJ09B0327-0400
t
Unit
µs
ns
ns
ns
ns
ns
ms
ns
ms
ns
ns
nxtc

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