DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 909

• Manufacturer Part Number: DF2148RTE20IV
• Description: MCU 5V 128K I-TEMP,PB-FREE, 100-
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2148RTE20IV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: Host Interface, I²C, IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

26.4.7
(1) The F-ZTAT and mask ROM versions have been confirmed as fully meeting the reference
(2) On-chip power supply step-down circuit
values for electrical characteristics shown in this manual. However, actual performance
figures, operating margins, noise margins, and other properties may vary due to differences in
the manufacturing process, on-chip ROM, layout patterns, etc.
When system evaluation testing is carried out using the F-ZTAT version, the same evaluation
tests should also be conducted for the mask ROM version when changing over to that version.
The H8S/2147N F-ZTAT does not incorporate an internal power supply step-down circuit.
When changing over to F-ZTAT versions or mask ROM versions incorporating an internal
step-down circuit, the VCC2 pin has the same pin location as the VCL pin in a step-down
circuit (See figure 26.3).
Therefore, note that the circuit patterns differ between these two types of products.
3. Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does
4. Maximum programming time (tP (max))
5. Number of times when the wait time after P-bit setting (z) = 200 µs.
6. Maximum erase time (tE (max))
7. Number of times when the wait time after E-bit setting (z) = 10 ms.
8. Minimum number of times for which all characteristics are guaranteed after rewriting
9. Reference value for 25 C (as a guideline, rewriting should normally function up to this
10. Data retention characteristic when rewriting is performed within the specification range,
Usage Note
The number of writes should be set according to the actual set value of (z) to allow
The number of erases should be set according to the actual set value of (z) to allow
not include the erase verification time.)
tP(max) = wait time after P-bit setting (z)
programming within the maximum programming time (tP(max)).
tE(max) = wait time after E-bit setting (z)
erasing within the maximum erase time (tE(max)).
(Guarantee range is 1 to minimum value).
value).
including the minimum value.
maximum programming count (N)
maximum erase count (N)
Rev. 4.00 Sep 27, 2006 page 863 of 1130
Section 26 Electrical Characteristics
REJ09B0327-0400