DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 917

MCU 5V 128K I-TEMP,PB-FREE, 100-

DF2148RTE20IV

Manufacturer Part Number
DF2148RTE20IV
Description
MCU 5V 128K I-TEMP,PB-FREE, 100-
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2148RTE20IV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
Host Interface, I²C, IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Table 26.45 DC Characteristics (3)
Item
Schmitt
trigger input
voltage
Input high
voltage
Input low
voltage
Output high
voltage
Conditions (Mask ROM version): V
(Flash memory version): V
P67 to P60*
KIN15 to KIN8*
IRQ2 to IRQ0*
IRQ5 to IRQ3
RES, STBY,
NMI, MD1, MD0
EXTAL,
PA7 to PA0 *
Port 7
Input pins
except (1) and
(2) above
RES, STBY,
MD1, MD0
PA7 to PA0
NMI, EXTAL,
input pins except
(1) and (3)
above
All output pins *
2
5
*
5
3
,
4
,
5
,
(1)
(2)
(3)
to 5.5 V, V
to 5.5 V, V
CC
CC
Symbol Min
V
V
V
V
V
V
T
T
T
IH
IL
OH
+
+
= 2.7 V to 5.5 V, AV
= 3.0 V to 5.5 V *
– V
T
SS
SS
V
V
V
V
V
V
–0.3
–0.3
–0.3
V
V
= AV
= AV
CC
CC
CC
CC
CC
CC
CC
CC
–0.5
–1.0
0.2
0.05 —
0.9
0.7
0.7
0.7
SS
SS
*
*
Rev. 4.00 Sep 27, 2006 page 871 of 1130
1
1
8
, AV
= 0 V, T
= 0 V, T
Typ
CC
Section 26 Electrical Characteristics
*
CC
1
*
= 2.7 V to 5.5 V, AV
1
a
a
= 3.0 V to 5.5 V, AV
Max
V
V
V
AV
V
V
V
0.8
V
0.8
= –20 to +75°C
= –20 to +75°C *
CC
CC
CC
CC
CC
CC
CC
CC
+0.3
+0.3
+0.3
+0.3 V
0.7
0.1
0.2
0.2
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
REJ09B0327-0400
8
Test
Conditions
V
V
5.5 V
V
V
5.5 V
I
I
(V
ref
OH
OH
CC
CC
CC
CC
*
ref
CC
1
= –200 µA
= –1 mA
< 4.0 V
= 4.0 V to
< 4.0 V
= 4.0 V to
= 2.7 V
= 3.0 V
< 4.0 V)

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